BSC072N025S 查看數據表（PDF） - Infineon Technologies
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BSC072N025S Datasheet PDF : 10 Pages
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OptiMOS™2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC072N025S G
Product Summary
V DS
R DS(on),max
ID
25 V
7.2 mΩ
40 A
PG-TDSON-8
Type
BSC072N025S G
Package
PG-TDSON-8
Marking
72N025S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse
E AS
dv /dt
T C=25 °C3)
I D=40 A, R GS=25 Ω
I D=40 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation
V GS
P tot
T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.4
page 1
Value
40
40
15
160
160
6
±20
60
2.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
2009-10-23
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