BSC072N025S 查看數據表（PDF） - Infineon Technologies
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BSC072N025S Datasheet PDF : 10 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=40 A; V GS=10 V
12
BSC072N025S G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.4
10
8
98 %
typ
6
2
300 µA
1.6
30 µA
1.2
4
0.8
2
0.4
0
-60
-10
40
90
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
140
190
0
-60
-10
40
90
140
190
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103
1000
Ciss
Coss
25 °C, 98%
102
25 °C
150 °C, 98%
150 °C
102
100
Crss
101
10
0
Rev. 1.4
10
20
V DS [V]
100
30
0
page 6
0.5
1
1.5
V SD [V]
2
2009-10-23
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