BSP60BSP62 查看數據表（PDF） - Siemens AG

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BSP60BSP62

PNP Silicon Darlington Transistors

Siemens AG 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage1)

IC = 10 mA, RBE = 150 Ω

BSP 60

BSP 61

BSP 62

Collector-base breakdown voltage

IC = 100 µA, IB = 0

BSP 60

BSP 61

BSP 62

Emitter-base breakdown voltage

IE = 100 µA, IB = 0

Collector-emitter cutoff current

VCE = VCERmax, VBE = 0

Emitter-base cutoff current

VEB = 4 V, IC = 0

DC current gain2)

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

Collector-emitter saturation voltage2)

IC = 500 mA, IB = 0.5 mA

IC = 1 A, IB = 1 mA

Base-emitter saturation voltage2)

IC = 500 mA, IB = 0.5 mA

IC = 1 A, IB = 1 mA

AC characteristics

Transition frequency

IC = 100 mA, VCE = 5 V, f = 100 MHz

Switching times

IC = 500 mA, IB1 = IB2 = 0.5 mA

(see diagrams)

BSP 60

… BSP 62

Symbol

Values

Unit

min. typ. max.

V(BR)CER

45

–

60

–

80

–

V(BR)CB0

60

–

80

–

90

–

V(BR)EB0 5

–

ICES

–

–

IEB0

–

–

hFE

VCEsat

VBEsat

1000 –

2000 –

–

–

–

–

–

–

–

–

V

–

–

–

–

–

–

–

10

µA

10

–

–

–

V

1.3

1.8

1.9

2.2

fT

–

200 –

MHz

ton

–

400 –

ns

toff

–

1500 –

ns

1) Compare RBE for thermal stability.

2) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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