BSP320 查看數據表（PDF） - Infineon Technologies
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BSP320 Datasheet PDF : 8 Pages
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BSP 320S
Avalanche Energy EAS = f (Tj)
parameter: ID = 2.9 A,VDD = 25 V
RGS = 25 Ω
65
mJ
55
50
45
40
35
30
25
20
15
10
5
0
20
40
60
80 100 120 ˚C
160
Tj
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
Typ. gate charge
VGS = f (QGate)
parameter: ID puls =2.9A
BSP320S
16
V
12
10
8
0,2 VDS max
6
4
2
0
02468
0,8 VDS max
10 12 nC 15
QGate
BSP320S
72
V
68
66
64
62
60
58
56
54
-60 -20
20
60 100 ˚C
180
Tj
Data Sheet
8
05.99
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