BSP321P 查看數據表（PDF） - Infineon Technologies

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BSP321P

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Parameter

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics2)

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Symbol Conditions

BSP321P

min.

Values

typ.

Unit

max.

C iss

-

C oss

V GS=0 V, V DS=-25 V,

f =1 MHz

-

C rss

-

t d(on)

-

tr

V DD=-50 V, V GS=-

-

10 V, I D=-0.98 A,

t d(off)

R G=6 W

-

tf

-

240

319 pF

62

82

28

42

5.9

8.8 ns

4.4

6.6

16.5 24.7

8.5

12.7

Q gs

Q gd

V DD=-80 V, I D=-

0.98 A, V GS=0 to -

Qg

10 V

V plateau

-

1.1

1.4 nC

-

4

6

-

9

12

-

4.5

-V

IS

I S,pulse

T C=25 °C

-

-

-0.98 A

-

-

-3.9

V SD

V GS=0 V, I F=0.98 A,

T j=25 °C

-

0.84

1.2 V

t rr

V R=50 V, I F=|I S|,

Q rr

di F/dt =100 A/µs

-

47

- ns

-

96

- nC

2) See figure 16 for gate charge parameter definition

Rev 1.05

page 3

2012-11-27

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