BSP321P 查看數據表（PDF） - Infineon Technologies
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BSP321P Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
25 °C
100 °C
125 °C
14 Typ. gate charge
V GS=f(Q gate); I D=-0.98 A pulsed
parameter: V DD
12
10
8
BSP321P
20 V
50 V
80 V
6
4
2
10-1
100
101
102
tAV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=-250 µA
0
103
0
2
4
6
8
10
-Qgate [nC]
16 Gate charge waveforms
120
V GS
115
Qg
110
105
V gs(th)
100
95
Q g(th)
90
-60 -20
20
60 100 140
Q gs
Tj [°C]
Rev 1.05
page 7
Q sw
Q gd
Q gate
2012-11-27
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