BSP324(2003) 查看數據表（PDF） - Infineon Technologies
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BSP324 Datasheet PDF : 8 Pages
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Rev. 1.0
BSP324
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.17 A, VGS = 10 V
130 BSP324
Ω
110
100
90
80
70
60
50
40
30
20
10
0
-60 -20
98%
typ
20
60
100 °C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
10 3
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID =94µA
2.6
V
98%
2.2
2
typ.
1.8
1.6
1.4
2%
1.2
1
0.8
0.6
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
10 0 BSP324
pF
A
Ciss
10 2
10 -1
Coss
10 1
Crss
10 0
0
5
10
15
20
V
30
VDS
10 -2
10 -3
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2003-02-21
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