BSP603S2L(2000) 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

BSP603S2L
(Rev.:2000)

OptiMOS Small-Signal-Transistor

Infineon Technologies 

Target data sheet

BSP603S2L

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

min.

Dynamic Characteristics

Transconductance

gfs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Ciss

Coss

Crss

td(on)

Rise time

Turn-off delay time

Fall time

tr

td(off)

tf

VDS≥2*ID*RDS(on)max ,

tbd

ID =4.1

VGS=0V, VDS=25V,

-

f=1MHz

-

-

VDD=30V, VGS=4.5V,

-

ID=5.2A, RG=5.6Ω

VDD=30V, VGS=4.5V,

-

ID=5.2mA, RG=5.6Ω

-

-

Values

typ.

tbd

tbd

tbd

tbd

tbd

tbd

tbd

tbd

max.

-

tbd

tbd

tbd

tbd

tbd

tbd

tbd

Unit

S

pF

ns

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Qgs

VDD=40V, ID=5.2A

Qgd

Qg

VDD=40V, ID=5.2A,

VGS=0 to 10V

V(plateau) VDD=40V, ID=5.2A

Reverse Diode

Inverse diode continuous

IS

forward current

TA=25°C

Inverse diode direct current, ISM

pulsed

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

Soft factor tf / ts

S

VGS=0V, IF=5.2A

VR=30V, IF=lS,

diF/dt=100A/µs

-

tbd tbd nC

-

tbd tbd

-

tbd tbd

-

tbd

-V

-

-

5.2 A

-

-

21

-

tbd tbd V

-

tbd tbd ns

-

tbd tbd nC

-

tbd

-

Page 3

2000-04-28

Share Link: