Q67060-S7213 查看數據表（PDF） - Infineon Technologies
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Q67060-S7213 Datasheet PDF : 8 Pages
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9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 2.6 A, VGS = 10 V
100 BSP603S2L
Ω
80
70
60
50
40
98%
30
typ
20
10
0
-60 -20
20
60 100
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
°C
180
Tj
pF
Ciss
10 3
Coss
BSP603S2L
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
2.5
V
250 µA
1.5
50 µA
1
0.5
0
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 2 BSP603S2L
A
10 1
10 2
10 1
0
Crss
5
10
15
20
V
30
VDS
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2003-10-29
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