BSS806NH6327(2011) 查看數據表（PDF） - Infineon Technologies
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BSS806NH6327 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V
100
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=11 µA
parameter: I D
1.2
BSS806N
80
98 %
60
typ
40
20
0.8
98 %
typ
0.4
2%
0
0
-60
-20
20
60 100 140 180
T j [°C]
-0.4
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
103
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
101
Ciss
100
25 °C
150 °C, 98%
Coss
102
10-1
Crss
10-2
150 °C
25 °C, 98%
101
0
Rev 2.3
5
10
15
V DS [V]
10-3
20
0
page 6
0.4
0.8
1.2
V SD [V]
1.6
2011-07-11
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