BSS80 查看數據表（PDF） - TY Semiconductor

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BSS80

(BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

TY Semiconductor 

SMD Type

SMD Type

TransistIoCrs

Product specification

BSS80,BSS82

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min Typ Max Unit

Collector-emitter breakdown BSS80

voltage

BSS82

V(BR)CEO IC = 10 mA, IB = 0

40

V

60

Collector-base breakdown voltage

V(BR)CBO IC = 10 ìA, IE = 0

60

V

Emitter-base breakdown voltage

V(BR)EBO IE = 10 ìA, IC = 0

5

V

Collector cutoff current

ICBO

VCB = 50 V, IE = 0

VCB = 50 V, IE = 0 , TA = 150

10 nA

10 ìA

Emitter cutoff current

IEBO VEB = 3 V, IC = 0

10 nA

BSS80/82B

40

IC = 100 ìA, VCE = 10 V

BSS80/82C

75

BSS80/82B

40

IC = 1 mA, VCE = 10 V

BSS80/82C

100

BSS80/82B

40

DC current gain *

hFE IC = 10 mA, VCE = 10 V

BSS80/82C

100

BSS80/82B

BSS80/82C

IC = 150 mA, VCE = 10 V

40

120

100

300

BSS80/82B

40

IC = 500 mA, VCE = 10 V

BSS80/82C

50

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

IC = 150 mA, IB = 15 mA

VCE(sat)

IC = 500 mA, IB = 50 mA

IC = 150 mA, IB = 15 mA

VBE(sat)

IC = 500 mA, IB = 50 mA

0.4

1.6

V

1.3

2.6

Transition frequency

fT IC = 20 mA, VCE = 20 V, f = 100 MHz

250

MHz

Collector-base capacitance

Ccb VCB = 10 V, f = 1 MHz

6

pF

Delay time

Rise time

Storage time

td

VCC = 30 V, IC = 150 mA, IB1 = 15 mA,VBE(off)

= 0.5 V

tr

VCC = 30 V, IC = 150 mA, IB1 = 15 mA,VBE(off)

= 0.5 V

tstg VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA,

10 ns

40 ns

80 ns

Fall time

tf

VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA,

30 ns

* Pulse test: t 300ìs, D = 2%.

hFE Classification

TYPE

BSS80

Rank

B

C

Marking

CHs

CJs

TYPE

Rank

Marking

BSS82

B

C

CLs

CMs

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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