E6325 查看數據表（PDF） - Siemens AG

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E6325

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 88

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 125

K/W

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

240

-

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA

0.6

0.8

Zero gate voltage drain current

IDSS

VDS = 240 V, VGS = 0 V, Tj = 25 °C

-

0.1

VDS = 240 V, VGS = 0 V, Tj = 125 °C

-

10

VDS = 100 V, VGS = 0 V, Tj = 25 °C

-

-

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V

-

10

Drain-Source on-state resistance

RDS(on)

VGS = 4.5 V, ID = 0.25 A

-

5

VGS = 1.8 V, ID = 14 mA

-

7

V

-

1.2

1

µA

100

100

nA

nA

100

Ω

8

15

Semiconductor Group

2

12/05/1997

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