E6325 查看數據表（PDF） - Siemens AG

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E6325

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 88

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

S

VDS≥ 2 * ID * RDS(on)max, ID = 0.25 A

0.14

0.31 -

Input capacitance

Ciss

pF

VGS = 0 V, VDS = 25 V, f = 1 MHz

-

80

110

Output capacitance

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

-

15

25

Reverse transfer capacitance

Crss

VGS = 0 V, VDS = 25 V, f = 1 MHz

-

8

12

Turn-on delay time

td(on)

ns

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RG = 50 Ω

-

5

8

Rise time

tr

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RG = 50 Ω

-

10

15

Turn-off delay time

td(off)

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RG = 50 Ω

-

30

40

Fall time

tf

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RG = 50 Ω

-

25

35

Semiconductor Group

3

12/05/1997

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