E6325 查看數據表（PDF） - Siemens AG
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E6325 Datasheet PDF : 7 Pages
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BSS 88
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.25 A, VGS = 4.5 V
20
Ω
RDS (on) 16
14
12
10
98%
8
typ
6
4
2
0
-60
-20
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
2.6
V
2.2
VGS(th) 2.0
1.8
1.6
1.4
98%
1.2
1.0
typ
0.8
2%
0.6
0.4
0.2
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 1
pF
C
10 2
A
IF
Ciss
10 0
10 1
Coss
Crss
10 0
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
12/05/1997
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