BT168B 查看數據表（PDF） - Philips Electronics
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BT168B Datasheet PDF : 6 Pages
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Philips Semiconductors
Thyristors
logic level for RCD/ GFI/ LCCB Applications
Product specification
BT168 series
IGT(Tj)
3 IGT(25 C)
BT169
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
BT169
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
IH(Tj)
IH(25 C)
3
BT169
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
5 IT / A
Tj = 125 C
Tj = 25 C
4 Vo = 1.067 V
Rs = 0.187 ohms
3
BT169
typ
max
2
1
0
0
0.5
1
1.5
2
2.5
VT / V
Fig.10. Typical and maximum on-state characteristic.
100 Zth j-lead (K/W)
BT169
10
1
P
D
tp
0.1
t
0.01
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth , j-lead versus
pulse width tp.
1000 dVD/dt (V/us)
100
RGK = 1 kohms
10
1
0
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.100
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