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BTA20-700BW 查看數據表(PDF) - STMicroelectronics

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BTA20-700BW
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA20-700BW Datasheet PDF : 6 Pages
1 2 3 4 5 6
®
BTA20 Series
SNUBBERLESS™
20A TRIACS
Table 1: Main Features
Symbol
Value
IT(RMS)
20
VDRM/VRRM
600 and 700
IGT (Q1) (max)
35 and 50
Unit
A
V
mA
A2
G
A1
DESCRIPTION
The BTA20 BW/CW triac family are high perform-
ance glass passivated chips technology.
The snubberless concept offer suppression of RC
network and it is suitable for application such as
phase control and static switching on inductive or
resistive load.
Thanks to their clip assembly technique, they
provide a superior performance in surge current
handling capabilities.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at
2500VRMS) complying with UL standards (File ref.:
E81734).
A1
A2
G
TO-220AB Insulated
Table 2: Order Codes
Part Numbers
BTA20-600BWRG
BTA20-600CWRG
BTA20-700BWRG
BTA20-700CWRG
Marking
BTA20-600BW
BTA20-600CW
BTA20-700BW
BTA20-700CW
Table 3: Absolute Maximum Ratings
Symbol
IT(RMS)
ITSM
I²t
dI/dt
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz
F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA dIG/dt = 1 A/µs
Repetitive
F = 50 Hz
Non repetitive
VDSM/VRSM Non repetitive peak off-state voltage tp = 10 ms
IGM
VGM
PG(AV)
Tstg
Tj
Peak gate current
Peak positive gate voltage
Average gate power dissipation
tp = 20 µs
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tc = 70°C
t = 10 ms
t = 8.3 ms
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Value
20
210
200
200
20
100
VDSM/VRSM
+ 100
4
16
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
V
W
°C
February 2006
REV. 2
1/6

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