BTA16-600CW3G 查看數據表（PDF） - ON Semiconductor

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BTA16-600CW3G

Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

BTA16−600CW3G, BTA16−800CW3G

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10

seconds

Symbol

RqJC

RqJA

TL

Value

2.3

60

260

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol Min

Typ

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

ON CHARACTERISTICS

IDRM,

TJ = 25°C

IRRM

−

−

TJ = 125°C

−

−

Peak On-State Voltage (Note 2)

(ITM = ± 22.5 A Peak)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VTM

−

−

IGT

2.0

−

2.0

−

2.0

−

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±500 mA)

Latching Current (VD = 12 V, IG = 1.2 x IGT)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IH

−

−

IL

−

−

−

−

−

−

Gate Trigger Voltage (VD = 12 V, RL = 30 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT

0.5

−

0.5

−

0.5

−

Gate Non−Trigger Voltage (TJ = 125°C)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGD

0.2

−

0.2

−

0.2

−

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current, See Figure 10.

(Gate Open, TJ = 125°C, No Snubber)

Critical Rate of Rise of On−State Current

(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)

Critical Rate of Rise of Off-State Voltage

(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

(dI/dt)c

8.5

−

dI/dt

−

−

dV/dt

1000

−

Max Unit

mA

0.005

2.0

1.55

V

mA

35

35

35

50

mA

mA

60

65

60

V

1.7

1.1

1.1

V

−

−

−

−

A/ms

50

A/ms

−

V/ms

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