BTA16-600CW3G 查看數據表（PDF） - ON Semiconductor

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BTA16-600CW3G

Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

BTA16−600CW3G, BTA16−800CW3G

100

Q3

Q1

10

Q2

1.6

VD = 12 V

RL = 30 W

1.4

1.2

VD = 12 V

RL = 30 W

Q1

1

Q3

0.8

0.6

Q2

1

−40 −25 −10 5 20 35 50 65 80 95 110 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Trigger Current Variation

0.4

−40 −25 −10 5 20 35 50 65 80 95 110 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Gate Trigger Voltage Variation

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

TRIGGER

CHARGE

CHARGE

CONTROL

NON‐POLAR

CL

LL

MEASURE

I

MT2

1N914 51 W

MT1

G

1N4007

-

200 V

+

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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5

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