BTA10-600BRG(2017) 查看數據表（PDF） - STMicroelectronics
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BTA10-600BRG Datasheet PDF : 14 Pages
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Characteristics
BTA10, BTB10, T10xx
1
Characteristics
Table 2: Absolute maximum ratings
Symbol
Parameter
IT(RMS)
ITSM
I2t
dl/dt
VDSM/VRSM
RMS on-state current (full sine
wave)
Non repetitive surge peak on-
state current (full cycle, Tj initial
= 25 °C)
I2t value for fusing
Critical rate of rise of on-state
current
IG = 2 x IGT , tr ≤ 100 ns
Non repetitive surge peak off-
state voltage
TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
Tc = 105 °C
Tc = 95 °C
tp = 20 ms
tp = 16.7 ms
Tj = 125 °C
Tj = 25 °C
IGM
PG(AV)
Tstg
Tj
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tj = 125 °C
Tj = 125 °C
Value
10
100
105
55
Unit
A
A
A2s
50
A/µs
VDRM/VRRM
+ 100
V
4
A
1
W
-40 to +150 °C
-40 to +125 °C
Symbol
VT(1)
VTO
RD
IDRM/IRRM
Table 3: Static electrical characteristics
Test Conditions
Tj
ITM = 14 A, tp = 380 µs
25 °C Max.
threshold on-state voltage
125 °C Max.
Dynamic resistance
125 °C Max.
VDRM = VRRM
25 °C
Max.
125 °C
Notes:
(1)For both polarities of A2 referenced to A1
Value
1.55
0.85
40
5
1
Unit
V
V
mΩ
µA
mA
2/14
DocID2937 Rev 7
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