BTS426L1 查看數據表（PDF） - Infineon Technologies
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BTS426L1 Datasheet PDF : 14 Pages
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GND disconnect with GND pull up
IN
2
ST
4
3
Vbb
PROFET
GND
1
OUT
5
Vbb
VIN VST
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive load
3
high
IN
Vbb
2
ST
4
PROFET
GND
OUT
5
1
Vbb
Normal load current can be handled by the PROFET itself.
Vbb disconnect with charged external inductive
load
S
3
high
IN
Vbb
2
PROFET
OUT
5
D
ST
4
GND
1
Vbb
If other external inductive loads L are connected to the PROFET, additional
elements like D are necessary.
BTS426L1
Inductive Load switch-off energy dissipation
E bb
IN
Vbb
E AS
ELoad
PROFET OUT
=
ST
EL
GND
L
{Z L RL
ER
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy dissipated in
PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
2IL·R· LL·(Vbb
+
|VOUT(CL)|)·
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
L [mH]
10000
1000
100
10
1
2
7
12
17
IL [A]
Semiconductor Group
8
2003-Oct-01
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