BTS560 查看數據表（PDF） - Siemens AG
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BTS560 Datasheet PDF : 15 Pages
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Target Data Sheet BTS560
Terms
Current sense status output
I bb
VbIN
3
Vbb
VON
IL
Vbb
IN
OUT
2
PROFET
1,5
RIN
IS
Vbb
R bb
ZD
IIS
V
Z,IS
IS
VIS
R
IS
V
IN
VbIS
4 IIS
I IN
DS
VZ,IS = 74 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
VOUT devices are connected in parallel). IS = IL/kilis can be
VIS
RIS
only driven by the internal circuit as long as Vout - VIS >
5 ??? V. If you want to measure load currents up to
Two or more devices can easily be connected in
IL(M),
RIS
should
be
less
than
Vbb - 5 ???
IL(M) / Kilis
V
.
parallel to increase load current capability.
Note: For large values of RIS the voltage VIS can
reach almost Vbb. See also overvoltage protection.
RON measurement layout
If you don’t use the current sense output in your
application, you can leave it open.
≤ 5.5 mm
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...300 µs).
Vbb force contacts
Out Force Sense
contacts contacts
(both out
pins parallel)
Input circuit (ESD protection)
V bb
Logic
unit
Short circuit
detection
+ Vbb
VON
OUT
V
ZD
Z,IN
V bIN
IN
I
IN
Rbb
Inductive and overvoltage output clamp
+ Vbb
VZ1
VON
V IN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 74 V (typ).
VZG
IS
DS
OUT
PROFET
VOUT
VON is clamped to VON(Cl) = 62 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-15 V typ. via VZG. With DS, VOUT is clamped to Vbb -
VON(CL) via VZ1. Using DS gives faster deenergizing of
Semiconductor Group
Page 7
1998-Jun-17
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