BU1010 查看數據表（PDF） - Vishay Semiconductors
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BU1010 Datasheet PDF : 6 Pages
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New Product
BU1006 thru BU1010
Vishay General Semiconductor
24
20
16
12
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Figure 3. Forward Power Dissipation
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89295 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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