BU1006A-E3/45(2008) 查看數據表（PDF） - Vishay Semiconductors
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BU1006A-E3/45 Datasheet PDF : 6 Pages
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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
24
20
16
12
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Figure 3. Average Rectified Forward Current
100
TJ = 150 °C
10
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 84800 For technical questions within your region, please contact one of the following:
Revision: 11-Mar-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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