BU1008A-E3 查看數據表（PDF） - Vishay Semiconductors
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BU1008A-E3 Datasheet PDF : 5 Pages
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www.vishay.com
BU1006A, BU1008A, BU1010A
Vishay General Semiconductor
1000
100
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.125 (3.2) x 45°
Chamfer
Case Type BU
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+ ~~ -
0.085 (2.16)
0.065 (1.65)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
0.161 (4.10)
0.142 (3.60)
9°
TYP.
View A
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.64 (16.28) REF.
R 0.11
(2.78) REF.
0.094 (2.39) x 45° REF.
0.028 (0.72)
0.020 (0.52)
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 29-Aug-17
3
Document Number: 84800
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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