BU2520 查看數據表（PDF） - Philips Electronics
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BU2520 Datasheet PDF : 8 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
IC / A
100
ICM
ICDC
10
= 0.01
BU2520AF
tp =
30 us
100 us
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.17. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
Product specification
BU2520AF
September 1997
6
Rev 1.500
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