BU2520D 查看數據表（PDF） - Philips Electronics
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BU2520D Datasheet PDF : 6 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520D
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 1.0 A; VCE = 5 V
IC = 6 A; VCE = 5 V
IF = 6 A
MIN.
-
-
100
7.5
-
800
-
-
-
5
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
300 mA
13.5 -
V
50
-
Ω
-
-
V
-
5.0
V
-
1.3
V
-
23
7
10
-
2.2
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
TYP.
115
4.5
0.35
MAX. UNIT
-
pF
5.5 µs
0.5 µs
TRANSISTOR
IC
DIODE
ICM
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms (16 kHz).
ICM
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.200
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