BU2525A 查看數據表（PDF） - SavantIC Semiconductor

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BU2525A

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU2525A

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A

VBEsat

Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=8A; IB=1.6A

VCE=rated ;VBE=0

Tj=125

VEB=7.5V; IC=0

hFE-1

DC current gain

IC=0.1A ; VCE=5V

hFE-2

DC current gain

IC=8A ; VCE=5V

CC

Collector capacitance

IE=0, VCB=10V;f=1MHz

MIN TYP. MAX UNIT

800

7.5

13.5

V

5.0

V

1.3

V

1.0

2.0

mA

1.0

mA

6

13

26

5

7

10

145

pF

2

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