BU2725DX 查看數據表（PDF） - Inchange Semiconductor
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BU2725DX Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2725DX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 7A; IB= 1.75A
VCE= 1700V; VBE= 0
VCE= 1700V; VBE= 0; TC=125℃
VEB= 7.5V ; IC= 0
1.0
V
0.95 V
1.0
2.0
mA
110
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
19
hFE-2
DC Current Gain
VECF
C-E Diode Forward Voltage
IC= 7A; VCE= 1V
IF= 7A
3.8
7.8
2.2
V
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