AS4LC2M8S1-12TC 查看數據表（PDF） - Alliance Semiconductor

零件编号

产品描述 (功能)

生产厂家

AS4LC2M8S1-12TC

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

Recommended operating conditions

Parameter

Symbol

Min

Nominal

Max

Unit

Supply voltage

VCC,VCCQ

3.0

3.3

3.6

V

GND

0.0

0.0

0.0

V

Input voltage

VIH

2.0

–

VIL

–0.3†

–

Output voltage‡

VOH

2.4

–

VOL

–

–

Ambient operating temperature

TA

0

† VIL Min = –1.5V for pulse widths less than 5 ns.

‡ IOH = –2mA, and IOL = 2mA.

Recommended operating conditions apply throughout this document unless otherwise specified.

VCC + 0.3

V

0.8

V

–

V

0.4

V

70

°C

Notes

8

8

Absolute maximum ratings

Parameter

Symbol

Min

Max

Unit

Notes

Input voltage

VIN,VOUT

–1.0

+4.6

V

Power supply voltage

VCC,VCCQ

–1.0

+4.6

V

Storage temperature (plastic)

TSTG

–55

+150

°C

Power dissipation

PD

–

1

W

Short circuit output current

IOUT

–

50

mA

Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect reliability.

6

ALLIANCE SEMICONDUCTOR

7/5/00

Share Link: