AS4LC1M16S1-10TC 查看數據表（PDF） - Alliance Semiconductor

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AS4LC1M16S1-10TC

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

DC electrical characteristics

Parameter

Symbol

Input leakage current IIL

Output leakage

current

Operating current

(one bank active)

Precharge standby

current (power

down mode)

IOL

ICC1

ICC2P

ICC2PS

Precharge standby

current (non-power-

down mode)

ICC2N

ICC2NS

Active standby

current (power-

down mode)

ICC3P

ICC3PS

Active standby

current (non-power-

down mode, one

bank active)

ICC3N

ICC3NS

Operating current

(burst mode)

ICC4

Refresh current

ICC5

Test conditions

0V ≤ VIN ≤ VCC,

Pins not under test = 0V

DOUT disabled, 0V ≤ VOUT ≤ VCCQ

tRC ≥ min, IO = 0mA,

burst length = 1

CKE ≤ VIL(max), tCK = 15 ns

CKE and CLK ≤ VIL(max), tCK = ∞

CS ≥ VIH(min), CKE ≥ VIH(min),

tCK = 15 ns; input signals changed

once during 30 ns

CLK ≤ VIL(max), CKE ≥ VIH(min),

tCK = ∞; input signals stable

CKE ≤ VIL(max), tCK = 15 ns

CLK, CKE ≤ VIL(max), tCK = ∞

CKE ≥ VIH(min), CS ≥ VIH(min),

tCK = 15 ns; input signals changed

once during 30 ns

CKE ≥ VIH(min), CLK ≥ VIL(max),

tCK = ∞; input signals stable

IO = 0 mA

Page burst

All banks activated

tCCD = tCCD(min)

tRC ≥ tRC(min)

Self refresh current ICC6

CL = CAS latency.

CKE ≤ 0.2 V

–7

–8

–10

Min Max Min Max Min Max Unit Notes

–5 +5 –5 +5 –5 +5 µA

–10 +10 –10 +10 –10 +10 µA

–

140

–

100

–

100 mA

1,3,

4,5

– 2.0 – 2.0 – 2.0 mA

– 2.0 – 2.0 – 2.0 mA

– 30 – 30 – 30 mA 1,2,3

– 6 – 6 – 6 mA 1,2,3

– 2 – 2 – 2 mA 1,2,3

– 2 – 2 – 2 mA 1,2,3

– 35 – 35 – 35 mA 1,2,3

– 10 – 10 – 10 mA 1,2,3

CL =3

CL =2

CL =1

140 – 130 – 120

125

–

115

–

100 mA

1,2,

3,5

80 – 70 – 70

80

–

70

–

70

mA

1,2,

3,5

2 – 2 – 2 mA

1 – 1 – 1 mA 15

7/5/00

ALLIANCE SEMICONDUCTOR

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