BUF420 查看數據表（PDF） - STMicroelectronics
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BUF420 Datasheet PDF : 8 Pages
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BUF420M
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Max
0.63
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER
ICEV
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -1.5V)
VCE = 850 V
VCE = 850 V
VCE = 850 V
VCE = 850 V
TC = 100 oC
TC = 100 oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VEBO
Emitter Base Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 200 mA
IE = 50 mA
IC = 10A
IC = 10 A
IC = 20 A
IC = 20 A
L = 25 mH
IB = 1 A
IB = 1 A
IB = 4 A
IB = 4 A
TC =100oC
TC =100oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 10A
IC = 10 A
IC = 20 A
IC = 20 A
IB = 1 A
IB = 1 A
IB = 4 A
IB = 4 A
TC =100oC
TC =100oC
dic/dt Rate of rise on-state
Collector Current
VCE(3µs) Collector-Emitter
Dynamic Voltage
VCE(5µs) Collector-Emitter
Dynamic Voltage
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
tc
Cross Over Time
VCC = 300 V
IB1 = 1.5 A
IB1 = 1.5 A
IB1 = 6 A
RC = 0 tp = 3 µs
TC =25oC
TC =100oC
TC =100oC
VCC = 300 V
IB1 = 1.5 A
IB1 = 1.5 A
RC = 60 Ω
TC =25oC
TC =100oC
VCC = 300 V
IB1 = 1.5 A
IB1 = 1.5 A
RC = 60 Ω
TC =25oC
TC =100oC
IC = 10 A
VBB = - 5 V
Vclamp = 400 V
L = 0.25 mH
VCC = 50 V
RBB = 0.6 Ω
IB1 = 1 A
ts
tf
tc
VCEW
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage
without Snubber
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
tc
Cross Over Time
IC = 10 A
VBB = - 5 V
Vclamp = 400 V
L = 0.25 mH
IC = 10 A
VBB = - 5 V
IB1 = 1 A
TC =125oC
IC = 10 A
VBB = 0
Vclamp = 400 V
L = 0.25 mH
VCC = 50 V
RBB = 0.6 Ω
IB1 = 1 A
TC =100oC
VCC = 50 V
RBB = 0.6 Ω
L = 0.25 mH
VCC = 50 V
RBB = 0.15 Ω
IB1 = 1 A
Min.
450
7
70
150
500
Typ.
0.8
0.5
0.9
1.1
100
2.1
1.1
1
0.05
0.08
1.5
0.04
0.07
Max.
0.2
1
0.2
1
1
2.8
2
1.5
1.5
8
4
2
0.1
0.18
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
A/µs
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
V
µs
µs
µs
2/8
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