BU931ZL-T3P-T 查看數據表（PDF） - Unisonic Technologies

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产品描述 (功能)

生产厂家

BU931ZL-T3P-T

NPN POWER DARLINGTON

Unisonic Technologies 

BU931Z

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Peak Current

Base Current

Base Peak Current

Total Dissipation (TC= 25 °C)

TO-220

TO-3P

Junction Temperature

Storage Temperature

SYMBOL

BVCEO

BVEBO

IC

ICM

IB

IBM

PD

TJ

TSTG

 ELECTRICAL CHARACTERISTICS

RATINGS

350

5

10

15

1

5

120

125

+175

-65 ~ +175

UNIT

V

V

A

A

A

A

W

°C

°C

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

Clamping voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Diode Forward Voltage

Inductive Load Storage Time / Fall Time

SYMBOL

ICEO

IEBO

VCL

VCE(SAT)1

VCE(SAT)2

VBE(SAT)1

VBE(SAT)2

hFE

VF

tS

tF

TEST CONDITIONS

VCE = 250V

VEB = 5V

IC = 100mA

IC = 7 A, IB = 70 mA

IC = 8 A, IB = 100 mA

IC = 7 A, IB = 70 mA

IC = 8 A, IB = 100 mA

VCE = 10 V, IC = 5 A

IF = 8 A

VCC = 12 V, Vclamp = 300 V

L = 7 mH, IC = 7 A, IB = 70 mA

VBE = 0, RBE = 47Ω

MIN

400

300

TYP

15

0.5

MAX UNIT

100 μA

20 mA

V

1.6 V

1.8 V

2.2 V

2.4 V

2.5 V

μs

μs

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R214-015.F

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