BUH50G 查看數據表（PDF） - ON Semiconductor
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BUH50G Datasheet PDF : 8 Pages
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10
IC/IB = 5
BUH50G
TYPICAL STATIC CHARACTERISTICS
10000
1000
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
1
TJ = 125°C
100
TJ = - 40°C
TJ = 25°C
10
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
10
1
Figure 7. Base−Emitter Saturation Region
Cob (pF)
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
3000
2500
2000
1500
1000
500
0
1
4000
3000
2000
1000
0
1
TYPICAL SWITCHING CHARACTERISTICS
TJ = 125°C
TJ = 25°C
IBoff = IC/2
VCC = 125 V
PW = 20 ms
4000
TJ = 125°C
TJ = 25°C
IBoff = IC/2
VCC = 125 V
3000
PW = 20 ms
IC/IB = 5
2000
IC/IB = 3
1000
IC/IB = 3
2
3
4
5
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Resistive Switching, ton
IC/IB = 3
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
0
1
300
200
IC/IB = 5
2
3
4
5
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Resistive Switch Time, toff
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
tc
TJ = 125°C
TJ = 25°C
IC/IB = 5
2
3
4
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, tsi
100
0
1
tfi
TJ = 125°C
TJ = 25°C
2
3
4
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Storage Time,
tc & tfi @ IC/IB = 3
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