BUK545-100B 查看數據表（PDF） - Philips Electronics
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BUK545-100B Datasheet PDF : 8 Pages
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Philips Semiconductors
PowerMOS transistor
Logic level FET
ID / A
50
40
30
10
7
BUK555-100A
5
VGS / V =
4
20
3
10
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(ON) / Ohm
0.5
VGS / V =
2.5
3
0.4
3.5
BUK555-100A
0.3
4
0.2
4.5
5
0.1
10
0
0
Fig.6.
20
40
ID / A
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
ID / A
50
40
Tj / C =
BUK555-100A
25
150
30
20
10
0
0
2
4
6
8
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Product Specification
BUK545-100A/B
gfs / S
20
BUK555-100A
15
10
5
0
0
20
40
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.0 a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VGS = 5 V
VGS(TO) / V
2
1
max.
typ.
min.
0
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1993
4
Rev 1.100
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