BUP200D 查看數據表（PDF） - Siemens AG
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BUP200D Datasheet PDF : 8 Pages
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BUP 200 D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
-
-
Values
Unit
E
-
55 / 150 / 56
Thermal Resistance
IGBT thermal resistance, chip case
Diode thermal resistance, chip case
RthJC
3.1
RthJCD
3.1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 0.1 mA
Collector-emitter saturation voltage
VGE = 15 V, IC = 1.5 A, Tj = 25 °C
VGE = 15 V, IC = 1.5 A, Tj = 125 °C
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V
AC Characteristics
Transconductance
VCE = 20 V, IC = 1.5 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
VGE(th)
4.5
VCE(sat)
-
-
ICES
-
IGES
-
gfs
-
Ciss
-
Coss
-
Crss
-
5.5
6.5
2.8
3.3
3.8
4.3
-
0.275
-
100
0.6
-
225
320
25
40
13
24
K/W
Unit
V
mA
nA
S
pF
Semiconductor Group
2
Dec-06-1995
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