BUP200D 查看數據表（PDF） - Siemens AG

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BUP200D

IGBT With Antiparallel Diode

Siemens AG 

BUP 200 D

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 600 V, VGE = 15 V, IC = 1.5 A

RGon = 100 Ω

-

Rise time

tr

VCC = 600 V, VGE = 15 V, IC = 1.5 A

RGon = 100 Ω

-

Turn-off delay time

td(off)

VCC = 600 V, VGE = -15 V, IC = 1.5 A

RGoff = 100 Ω

-

Fall time

tf

VCC = 600 V, VGE = -15 V, IC = 1.5 A

RGoff = 100 Ω

-

Total turn-off loss energy

Eoff

VCC = 600 V, VGE = -15 V, IC = 1.5 A

RGoff = 100 Ω

-

30

20

170

15

0.25

Free-Wheel Diode

Diode forward voltage

VF

IF = 4 A, VGE = 0 V, Tj = 25 °C

-

2.3

IF = 4 A, VGE = 0 V, Tj = 125 °C

-

1.9

Reverse recovery time

trr

IF = 4 A, VR = -300 V, VGE = 0 V

diF/dt = -800 A/µs

Tj = 25 °C

-

-

Tj = 125 °C

-

60

Reverse recovery charge

Qrr

IF = 4 A, VR = -300 V, VGE = 0 V

diF/dt = -800 A/µs

Tj = 25 °C

-

-

Tj = 125 °C

-

1

max.

50

30

250

25

-

3

-

-

100

-

1.8

Unit

ns

nS

ns

mWs

V

ns

µC

Semiconductor Group

3

Dec-06-1995

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