BUP200D 查看數據表（PDF） - Siemens AG
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BUP200D Datasheet PDF : 8 Pages
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BUP 200 D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
55
W
45
Ptot
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 1
A
IC
10 0
tp = 4.5µs
10 µs
100 µs
1 ms
10 -1
10 ms
DC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
3.6
A
IC
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 1
K/W
ZthJC
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 0
10 1
10 2
10 3
V
VCE
Semiconductor Group
4
10 -2
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Dec-06-1995
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