Q67078-A4200-A2 查看數據表（PDF） - Siemens AG
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Q67078-A4200-A2 Datasheet PDF : 7 Pages
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BUP 304
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 304
VCE IC
1000V 35A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67078-A4200-A2
Values
Unit
1000
V
1000
± 20
A
35
23
70
46
mJ
23
W
310
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
Jul-30-1996
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