Q67078-A4200-A2 查看數據表（PDF） - Siemens AG

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Q67078-A4200-A2

IGBT

Siemens AG 

BUP 304

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 20 A

Typ. capacitances

C = f (VCE)

parameter: VGE = 0 V, f = 1 MHz

20

V

VGE 16

14

400 V

800 V

12

10

8

6

4

2

0

0 20 40 60 80 100 120 140 nC 180

QGate

Typ. switching time t = f(RG)

inductive load, with freewheel diode BYP 102

parameter: Tj = 125 °C, VCE = 600 V, VGE = ± 15 V, IC = 10 A

Semiconductor Group

6

Jul-30-1996

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