BUV21 查看數據表（PDF） - ON Semiconductor
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BUV21 Datasheet PDF : 4 Pages
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BUV21
40
10
1
0.1
1
10
100 200
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
IC/IB = 8
1.6
1.2
0.8
VBE
0.4
VCE
0
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
50
40
30
20
10
0
100
VCE = 5 V
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain
VCE = 100 V
IC/IB1 = 8
3.0
IB1 = IB2
2.0
1.0
tS
0.4
0.3
ton
0.2
tF
0
5
10
15
20
25
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
VCC
RC
IB2
IB1
RB
RC − RB: Non inductive resistances
10,000 mF
VCC = 100 V
RC = 4 W
RB = 2.2 W
Figure 6. Switching Times Test Circuit
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