BUW12W 查看數據表（PDF） - Philips Electronics
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BUW12W Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12W; BUW12AW
handbook, full pagewidth
103
IC
(A)
102
ICM max
10 IC max
(1)
II
1
MGB927
10−1
10−2
10−3
1
I
(2)
III
DC
BUW12W
BUW12AW
IV
10
102
103 VCE (V) 104
Tmb ≤ 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs.
IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.
(1) Ptot max line.
(2) Second breakdown limits.
Fig.2 Forward bias SOAR.
1997 Aug 14
4
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