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BUW13W 查看數據表(PDF) - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BUW13W
Silicon diffused power transistors
Philips Electronics
BUW13W Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13W; BUW13AW
2.0
handbook, full pagewidth
VBEsat
VCEsat
(V)
1.5
MGB915
1.0
(1)
(2)
0.5
0
10
−
1
I
C
/I
B
= 5.
(1) V
BE
; T
j
= 25
°
C.
(2) V
BE
; T
j
= 100
°
C.
(3)
(4)
1
(3) V
CE
; T
j
= 100
°
C.
(4) V
CE
; T
j
= 25
°
C.
10
IC (A)
10
2
Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
1.6
handbook, full pagewidth
VBE
(V)
1.4
(1)
1.2
(2)
(3)
1.0
MGB912
0.8
0
1
2
3
4
5
IB (A)
6
T
j
= 25
°
C.
(1) I
C
= 15 A.
(2) I
C
= 10 A.
(3) I
C
= 5 A.
Fig.8 Base-emitter voltage as a function of base current; typical values.
1997 Aug 13
6
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