BUW13W 查看數據表（PDF） - Philips Electronics
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BUW13W Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13W; BUW13AW
10
handbook, halfpage
VCEsat
(V)
1
MGB871
(1)
(2) (3)
102
handbook, halfpage
hFE
10
MBC096
VCE = 5 V
1V
10−1
10−2
10−1
1
IB (A) 10
(1) IC = 5 A.
(2) IC = 10 A.
(3) IC = 15 A.
Tj = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9 Collector-emitter saturation voltage as a
function of base current.
1
10−2
10−1
1
10 IC (A) 102
Fig.10 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.11 Test circuit resistive load.
handbook, halfpage
tr
90%
−IB
10%
90%
−IC
10%
ton
MBB730
−IB on
t
−IB off
−IC on
tf
t
ts
toff
Fig.12 Switching time waveforms with
resistive load.
1997 Aug 13
7
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