BUW133 查看數據表（PDF） - Inchange Semiconductor
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BUW133 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUW133/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BUW133
450
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
IC= 0.1A ; IB= 0; L= 10mH
V
BUW133A
500
VCE(sat)-1
Collector-Emitter
Saturation Voltage
BUW133 IC= 5A; IB=B 0.7A
BUW133A IC= 5A; IB=B 1A
2.5
V
1.0
VCE(sat)-2
Collector-Emitter
Saturation Voltage
BUW133 IC= 10A; IB= 1.3A
BUW133A IC= 10A; IB= 2A
3.0
V
1.5
VBE(sat)
ICEV
IEBO
Base-Emitter
Saturation Voltage
BUW133 IC= 10A; IB= 1.3A
BUW133A IC= 10A; IB= 2A
Collector Cutoff Current
VCE=VCESMmax;VBE=-1.5V
VCE=VCESMmax;VBE=-1.5V;TJ=100℃
Emitter Cutoff Current
VEB= 6V; IC= 0
1.5
V
1.5
0.25
1.5
mA
1
mA
hFE
DC Current Gain
IC= 15A ; VCE= 5V
5
COB
Output Capacitance
Switching Times , Resistive Load
IE= 0 ; VCB= 10V; ftest= 1kHz
400 pF
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 10A ;IB1= 1.3A;IB2= -2.6A
0.4
μs
1.3
μs
0.15
μs
isc Website：www.iscsemi.cn
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