BUZ100 查看數據表（PDF） - Siemens AG

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BUZ100

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens AG 

BUZ 100

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• dv/dt rated

• Ultra low on-resistance

• 175°C operating temperature

• also in TO-220 SMD available

Type

BUZ 100

VDS

50 V

ID

60 A

RDS(on)

0.018 Ω

Maximum Ratings

Parameter

Continuous drain current

TC = 101 °C

Pulsed drain current

TC = 25 °C

Avalanche energy, single pulse

ID = 60 A, VDD = 25 V, RGS = 25 Ω

L = 70 µH, Tj = 25 °C

Reverse diode dv/dt

IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs

Tjmax = 175 °C

Gate source voltage

Power dissipation

TC = 25 °C

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Pin 1

G

Pin 2

D

Pin 3

S

Package

TO-220 AB

Ordering Code

C67078-S1348-A2

Symbol

ID

IDpuls

EAS

dv/dt

VGS

Ptot

Tj

Tstg

RthJC

RthJA

Values

Unit

A

60

240

mJ

250

kV/µs

6

± 20

V

W

250

-55 ... + 175 °C

-55 ... + 175

≤ 0.6

K/W

≤ 75

E

55 / 175 / 56

Semiconductor Group

1

07/96

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