Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
BUZ100 查看數據表(PDF) - Siemens AG
零件编号
产品描述 (功能)
生产厂家
BUZ100
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
BUZ100 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 100
Power dissipation
P
tot
=
ƒ
(
T
C
)
260
W
220
P
tot
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 °C 180
T
C
Safe operating area
I
D
=
ƒ
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25°C
10
3
Drain current
I
D
=
ƒ
(
T
C
)
parameter:
V
GS
≥
10 V
65
A
55
I
D
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
T
C
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
10
0
A
I
D
10
2
/
I
D
=
V
DS
R
DS(on)
10
1
t
p
= 30.0µs
100 µs
1 ms
10 ms
DC
K/W
Z
thJC
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
0
10
0
10
1
Semiconductor Group
V 10
2
V
DS
5
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
07/96
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]