BUZ100 查看數據表（PDF） - Siemens AG
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BUZ100 Datasheet PDF : 9 Pages
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BUZ 100
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
140 Ptot = 250W
A
l
kj i
h
120
ID 110
100
VGS [V]
a
4.0
gb
4.5
c
5.0
90
d
5.5
fe
6.0
80
f
6.5
70
g
7.0
60
eh
7.5
i
8.0
50
j
9.0
d
40
k
10.0
l
20.0
30
c
20
10
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.055
Ω
a
b
c
d
e
RDS
0.045
(on)
0.040
0.035
0.030
0.025
0.020
f
g
0.015
h
i
j
0.010
VGS [V] =
0.005 a b c d e f
45.05 5.5 6.0 6.5 7.0 7.5
0.000
ghi j
8.0 9.0 10.0 20.0
0
20
40
60
80
A
120
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
40
S
gfs
30
25
20
15
10
5
0
0
10
20
30
40
A
60
ID
Semiconductor Group
6
07/96
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