BUZ100L 查看數據表（PDF） - Siemens AG
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BUZ100L Datasheet PDF : 9 Pages
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BUZ 100L
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
140 Ptot = 250W
A
l kj i h g
120
ID 110
100
90
80
70
60
50
40
30
20
VGS [V]
a
2.0
fb
2.5
c
3.0
d
3.5
e
4.0
ef
4.5
g
5.0
h
5.5
i
6.0
dj
7.0
k
8.0
l
10.0
c
10
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 30 A, VGS = 5 V
0.050
Ω
RDS
0.040
(on)
0.035
0.030
0.025
98%
0.020
typ
0.015
0.010
0.005
0.000
-60 -20
20
60 100 °C 180
Tj
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
60
S
50
gfs
45
40
35
30
25
20
15
10
5
0
0
10
20
30
40
A
60
ID
Semiconductor Group
6
07/96
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