BUZ 102
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
100
Ptot = 200Wl
A
kj i h
ID
80
70
60
50
40
30
20
VGS [V]
ga
4.0
b
4.5
c
5.0
fd
5.5
e
6.0
f
6.5
eg
7.0
h
7.5
i
8.0
dj
9.0
k
10.0
l
20.0
c
10
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.070
a
b
c
d
e
f
Ω
0.060
RDS (on0).055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
g
h
i
j
k
0.010 VGS [V] =
abcdef
0.005 4.05 5.0 5.5 6.0 6.5 7.0
0.000
ghi j k
7.5 8.0 9.0 10.0 20.0
0 10 20 30 40 50 60 70 A 90
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
30
S
26
gfs
24
22
20
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
A
60
ID
Semiconductor Group
6
07/96