C67078-S3109-A2 查看數據表（PDF） - Siemens AG
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C67078-S3109-A2 Datasheet PDF : 9 Pages
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BUZ 308
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
6.0
Ptot = 75W
A
5.0
ID
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
l
kj i h g f
VGS [V]
e a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
d f 6.5
g 7.0
h 7.5
i 8.0
c j 9.0
k 10.0
l 20.0
b
0.5
0.0
0
a
5 10 15 20 25 30 35 40 V 50
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
5.0
A
ID
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
13
Ω
a
b
c
d
11
RDS (on) 10
9
8
7
6
e
5
f
4
ig jh
k
3
2 VGS [V] =
1
abc
4.05 5.0 5.5
0
0.0
1.0
def g
6.0 6.5 7.0 7.5
2.0
3.0
hi j k
8.0 9.0 10.0 20.0
4.0 A 5.5
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
3.0
S
gfs
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0
ID
Semiconductor Group
6
09/96
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